Hall Effect in Metals and Semiconductors

 

 11802.00 Hall Effect in n-germanium

This experiment illustrates

  • · Temperature dependence of Conductivity.
  • · Temperature dependence of Hall Voltage.
  • · The energy gap of germanium.
  • · Determine the sign of the charge carriers.
  • · Concentration of holes (electrons).
  • · Mobility of holes.
The carrier board consists of a double layer rigid circuit board with integrated electric heating system and thermocouple laminated between the board layers. A constant current power supply is mounted on the board to maintain a constant control current through the crystal even though the resistance of the semiconductor crystal varies strongly with temperature. Connections for power and measurements are made through 4 mm banana jacks.

11805.00 Hall Effect in p-germanium

Similar in design to the n-germanium model, the crystal is mounted on a double layer printed circuit card with an internal electric heater monitored by a thermocouple. A circuit card mounted constant current regulator assures constant control current independently of the resistance of the semiconductor crystal which varies strongly with temperature.

 

The 4 mm banana jacks take the Hall voltage and the drop of voltage along the crystal. The circuit card must be mounted between the poles of an electromagnet to provide the magnetic field.

The Hall Effect in copper and in zinc can be measured on similar circuit cards.

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